Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam

Аннотация

The effect of annealing temperature and time on the luminescence intensity of the InGaN/GaN heterostructure subjected to ion beam etching was studied. We show that annealing at a temperature of 1100°C makes it possible to eliminate the radiation defects in the GaN layers that arise in the etching process with a focused Ga⁺ ion beam (30 keV).