Effect of the Samarium Impurity on the Local Structure of Se95Te5 Chalcogenide Glassy Semiconductor and Current Passage through Al–Se95Te5〈Sm〉–Te Structures


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The effect of samarium doping on the local structure and morphological features of the surface of a Se95Te5 chalcogenide glassy semiconductor film is investigated by X-ray diffraction analysis and atomic force microscopy, and the effect of doping on the current flow through Al–Se95Te5〈Sm〉–Te structures is examined by measuring the IV characteristics in the steady-state mode. The results obtained are interpreted using Lampert’s theory of injection currents, the Elliott void-cluster model, and the Mott and Street charged defects model proposed for chalcogenide glasses.

作者简介

S. Ataeva

Abdullaev Institute of Physics, Azerbaijan National Academy of Sciences

编辑信件的主要联系方式.
Email: seva_atayeva@mail.ru
阿塞拜疆, Baku, Az-1143

S. Mekhtieva

Abdullaev Institute of Physics, Azerbaijan National Academy of Sciences

Email: seva_atayeva@mail.ru
阿塞拜疆, Baku, Az-1143

A. Isaev

Abdullaev Institute of Physics, Azerbaijan National Academy of Sciences

Email: seva_atayeva@mail.ru
阿塞拜疆, Baku, Az-1143

S. Garibova

Abdullaev Institute of Physics, Azerbaijan National Academy of Sciences; Khazar University

Email: seva_atayeva@mail.ru
阿塞拜疆, Baku, Az-1143; Baku, Az-1096

A. Huseynova

Abdullaev Institute of Physics, Azerbaijan National Academy of Sciences

Email: seva_atayeva@mail.ru
阿塞拜疆, Baku, Az-1143

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