Temperature Dependence of the Band Gap of MnAgIn7S12 Single Crystals
- 作者: Bodnar I.1, Chan B.1, Pavlovskii V.2, Svitsiankou I.2, Yablonskii G.2
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隶属关系:
- Belarusian State University of Informatics and Radioelectronics
- Institute of Physics, National Academy of Sciences of Belarus
- 期: 卷 53, 编号 12 (2019)
- 页面: 1593-1596
- 栏目: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/207357
- DOI: https://doi.org/10.1134/S106378261916005X
- ID: 207357
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详细
MnAgIn7S12 single crystals 16 mm in diameter and ~40 mm in length are grown by planar crystallization of the melt. It is shown that the material grown crystallizes with the formation of the cubic spinel structure. From the transmittance spectra recorded in the region of fundamental absorption in the temperature range 10–320 K, the band gap Eg of the single crystals and its temperature dependence are determined. The dependence has a shape typical of most semiconductor materials: as the temperature is lowered, the band gap Eg increases. A calculation is carried out, and it is shown that the calculated values are in agreement with the experimental data.
作者简介
I. Bodnar
Belarusian State University of Informatics and Radioelectronics
编辑信件的主要联系方式.
Email: chemzav@bsuir.by
白俄罗斯, Minsk, 220013
B. Chan
Belarusian State University of Informatics and Radioelectronics
Email: chemzav@bsuir.by
白俄罗斯, Minsk, 220013
V. Pavlovskii
Institute of Physics, National Academy of Sciences of Belarus
Email: chemzav@bsuir.by
白俄罗斯, Minsk, 220072
I. Svitsiankou
Institute of Physics, National Academy of Sciences of Belarus
Email: chemzav@bsuir.by
白俄罗斯, Minsk, 220072
G. Yablonskii
Institute of Physics, National Academy of Sciences of Belarus
Email: chemzav@bsuir.by
白俄罗斯, Minsk, 220072