Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching
- 作者: Levitskii Y.1, Mitrofanov M.1, Voznyuk G.1, Nikolayev D.1, Mizerov M.1, Evtikhiev V.1
-
隶属关系:
- Ioffe Institute
- 期: 卷 53, 编号 11 (2019)
- 页面: 1545-1549
- 栏目: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/207330
- DOI: https://doi.org/10.1134/S1063782619110101
- ID: 207330
如何引用文章
详细
The ion-beam etching of AlGaAs/GaAs heterostructures gives rise to radiation defects and, as a result, leads to photoluminescence quenching. Annealing at 620°C in an atmosphere of As almost completely restores the quantum efficiency of photoluminescence in the case of radiation-induced defects lying at a distance of up to 150 nm from the heterointerface.
作者简介
Ya. Levitskii
Ioffe Institute
Email: Evtikhiev@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Mitrofanov
Ioffe Institute
Email: Evtikhiev@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
G. Voznyuk
Ioffe Institute
Email: Evtikhiev@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
D. Nikolayev
Ioffe Institute
Email: Evtikhiev@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Mizerov
Ioffe Institute
Email: Evtikhiev@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Evtikhiev
Ioffe Institute
编辑信件的主要联系方式.
Email: Evtikhiev@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021