Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD
- 作者: Aleshkin V.1, Baidus N.2, Dubinov A.1, Kudryavtsev K.1, Nekorkin S.2, Kruglov A.2, Reunov D.2
-
隶属关系:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Lobachevsky State University of Nizhny Novgorod
- 期: 卷 53, 编号 8 (2019)
- 页面: 1138-1142
- 栏目: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/206686
- DOI: https://doi.org/10.1134/S1063782619080037
- ID: 206686
如何引用文章
详细
The mode of the growth of InGaAs quantum dots by MOS-hydride epitaxy on GaAs substrates without a deviation and with a deviation of 2° is selected for laser structures emitting at wavelengths above 1.2 μm at room temperature. As a result, a quantum-dot density of 4 × 1010 cm–2 is achieved. Stimulated emission is observed in laser structures with seven layers of quantum dots at a wavelength of 1.06 μm at liquid-nitrogen temperature. The threshold power density of optical pumping is about 5 kW/cm2.
作者简介
V. Aleshkin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sanya@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
N. Baidus
Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
A. Dubinov
Institute for Physics of Microstructures, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: sanya@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
K. Kudryavtsev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sanya@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
S. Nekorkin
Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
A. Kruglov
Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
D. Reunov
Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950