Enviar artigo por via de e-mail Observation of Regions of Negative Differential Conductivity and Current Generation during Tunneling through Zero-Dimensional Defect Levels of the h-BN Barrier in Graphene/h-BN/Graphene Heterostructures
- Autores: Khanin Y.N.1, Vdovin E.E.1, Mishchenko A.2, Novoselov K.S.2
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Afiliações:
- Institute of Problems of Microelectronics Technology, Russian Academy of Sciences
- School of Physics and Astronomy, University of Manchester
- Edição: Volume 53, Nº 8 (2019)
- Páginas: 1038-1041
- Seção: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/206604
- DOI: https://doi.org/10.1134/S1063782619080104
- ID: 206604
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Resumo
Tunneling and magnetic tunneling are investigated in graphene/h-BN/graphene van der Waals heterosystems. Two new types of systems are found, in which negative differential conductivity regions are implemented due to resonant tunneling through defect levels in the h-BN barrier, and current caused by their presence is generated.
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Sobre autores
Yu. Khanin
Institute of Problems of Microelectronics Technology, Russian Academy of Sciences
Email: vdov62@yandex.ru
Rússia, Chernogolovka, Moscow oblast, 142432
E. Vdovin
Institute of Problems of Microelectronics Technology, Russian Academy of Sciences
Autor responsável pela correspondência
Email: vdov62@yandex.ru
Rússia, Chernogolovka, Moscow oblast, 142432
A. Mishchenko
School of Physics and Astronomy, University of Manchester
Email: vdov62@yandex.ru
Reino Unido da Grã-Bretanha e Irlanda do Norte, Manchester, Oxford Road, M13 9PL
K. Novoselov
School of Physics and Astronomy, University of Manchester
Email: vdov62@yandex.ru
Reino Unido da Grã-Bretanha e Irlanda do Norte, Manchester, Oxford Road, M13 9PL
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