Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation
- Авторы: Ivanov P.1, Kudoyarov M.1, Potapov A.1, Samsonova T.1
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Учреждения:
- Ioffe Institute
- Выпуск: Том 53, № 6 (2019)
- Страницы: 850-852
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/206404
- DOI: https://doi.org/10.1134/S106378261906006X
- ID: 206404
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Аннотация
The effect of proton irradiation on the electrical characteristics of high-voltage (3 kV) 4H-SiC junction diodes is studied. The diodes are irradiated through a 10-μm-thick Ni mask. The proton energy and the irradiation dose are 2.8 MeV and 4 × 1011 cm–2, respectively. After irradiation, the forward differential resistance of the diodes increased by ~35%, the reverse-recovery charge decreased by a factor of ~3, and the nature of the reverse recovery became “hard.”
Об авторах
P. Ivanov
Ioffe Institute
Автор, ответственный за переписку.
Email: Pavel.Ivanov@mail.ioffe.ru
Россия, St. Petersburg, 194021
M. Kudoyarov
Ioffe Institute
Email: Pavel.Ivanov@mail.ioffe.ru
Россия, St. Petersburg, 194021
A. Potapov
Ioffe Institute
Email: Pavel.Ivanov@mail.ioffe.ru
Россия, St. Petersburg, 194021
T. Samsonova
Ioffe Institute
Email: Pavel.Ivanov@mail.ioffe.ru
Россия, St. Petersburg, 194021