Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy
- Авторы: Sobolev M.1, Lazarenko A.1, Mizerov A.1, Nikitina E.1, Pirogov E.1, Timoshnev S.1, Bouravleuv A.1,2
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Учреждения:
- St. Petersburg Academic University
- St. Petersburg Electrotechnical University
- Выпуск: Том 52, № 16 (2018)
- Страницы: 2128-2131
- Раздел: 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY
- URL: https://journals.rcsi.science/1063-7826/article/view/205472
- DOI: https://doi.org/10.1134/S1063782618160327
- ID: 205472
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Аннотация
The growth of single crystalline GaP nucleation and buffer layers on Si substrates by molecular-beam epitaxy is demonstrated. The use of two different regimes of migration-enhanced epitaxy was studied. It was found that p–n junctions can be created due to the interdiffusion during the growth of GaP layer on p-type Si substrate.
Об авторах
M. Sobolev
St. Petersburg Academic University
Автор, ответственный за переписку.
Email: sobolevsms@gmail.com
Россия, St. Petersburg, 194021
A. Lazarenko
St. Petersburg Academic University
Email: sobolevsms@gmail.com
Россия, St. Petersburg, 194021
A. Mizerov
St. Petersburg Academic University
Email: sobolevsms@gmail.com
Россия, St. Petersburg, 194021
E. Nikitina
St. Petersburg Academic University
Email: sobolevsms@gmail.com
Россия, St. Petersburg, 194021
E. Pirogov
St. Petersburg Academic University
Email: sobolevsms@gmail.com
Россия, St. Petersburg, 194021
S. Timoshnev
St. Petersburg Academic University
Email: sobolevsms@gmail.com
Россия, St. Petersburg, 194021
A. Bouravleuv
St. Petersburg Academic University; St. Petersburg Electrotechnical University
Email: sobolevsms@gmail.com
Россия, St. Petersburg, 194021; St. Petersburg, 197376