Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy
- Autores: Sobolev M.1, Lazarenko A.1, Mizerov A.1, Nikitina E.1, Pirogov E.1, Timoshnev S.1, Bouravleuv A.1,2
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Afiliações:
- St. Petersburg Academic University
- St. Petersburg Electrotechnical University
- Edição: Volume 52, Nº 16 (2018)
- Páginas: 2128-2131
- Seção: 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY
- URL: https://journals.rcsi.science/1063-7826/article/view/205472
- DOI: https://doi.org/10.1134/S1063782618160327
- ID: 205472
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Resumo
The growth of single crystalline GaP nucleation and buffer layers on Si substrates by molecular-beam epitaxy is demonstrated. The use of two different regimes of migration-enhanced epitaxy was studied. It was found that p–n junctions can be created due to the interdiffusion during the growth of GaP layer on p-type Si substrate.
Sobre autores
M. Sobolev
St. Petersburg Academic University
Autor responsável pela correspondência
Email: sobolevsms@gmail.com
Rússia, St. Petersburg, 194021
A. Lazarenko
St. Petersburg Academic University
Email: sobolevsms@gmail.com
Rússia, St. Petersburg, 194021
A. Mizerov
St. Petersburg Academic University
Email: sobolevsms@gmail.com
Rússia, St. Petersburg, 194021
E. Nikitina
St. Petersburg Academic University
Email: sobolevsms@gmail.com
Rússia, St. Petersburg, 194021
E. Pirogov
St. Petersburg Academic University
Email: sobolevsms@gmail.com
Rússia, St. Petersburg, 194021
S. Timoshnev
St. Petersburg Academic University
Email: sobolevsms@gmail.com
Rússia, St. Petersburg, 194021
A. Bouravleuv
St. Petersburg Academic University; St. Petersburg Electrotechnical University
Email: sobolevsms@gmail.com
Rússia, St. Petersburg, 194021; St. Petersburg, 197376