Electromechanical Switch Based on InxGa1 –xAs Nanowires
- Авторлар: Alekseev P.1, Sharov V.1, Dunaevskiy M.1, Cirlin G.2,3, Reznik R.3, Berkovits V.1
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Мекемелер:
- Ioffe Institute
- Academic University
- ITMO University
- Шығарылым: Том 52, № 14 (2018)
- Беттер: 1833-1835
- Бөлім: Nanostructure Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/205030
- DOI: https://doi.org/10.1134/S1063782618140026
- ID: 205030
Дәйексөз келтіру
Аннотация
Piezoresistance effect of the InxGa1 –xAs nanowires was studied by scanning probe microscopy. The effect was investigated by measuring of the I–V curves with simultaneous bending of the nanowire by the probe. A modulation of the conductivity of In0.85Ga0.15As NWs induced by a mechanical stress exceeding three orders of magnitude was observed. For the explanation a model based on the surface states is presented. Such an observation opens new ways for the design of electromechanical switches with record parameters.
Авторлар туралы
P. Alekseev
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: npoxep@gmail.com
Ресей, St. Petersburg
V. Sharov
Ioffe Institute
Email: npoxep@gmail.com
Ресей, St. Petersburg
M. Dunaevskiy
Ioffe Institute
Email: npoxep@gmail.com
Ресей, St. Petersburg
G. Cirlin
Academic University; ITMO University
Email: npoxep@gmail.com
Ресей, St. Petersburg; St. Petersburg
R. Reznik
ITMO University
Email: npoxep@gmail.com
Ресей, St. Petersburg
V. Berkovits
Ioffe Institute
Email: npoxep@gmail.com
Ресей, St. Petersburg