Отправить статью по E-mail Electromechanical Switch Based on InxGa1 –xAs Nanowires
- Авторы: Alekseev P.A.1, Sharov V.A.1, Dunaevskiy M.S.1, Cirlin G.E.2,3, Reznik R.R.3, Berkovits V.L.1
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Учреждения:
- Ioffe Institute
- Academic University
- ITMO University
- Выпуск: Том 52, № 14 (2018)
- Страницы: 1833-1835
- Раздел: Nanostructure Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/205030
- DOI: https://doi.org/10.1134/S1063782618140026
- ID: 205030
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Аннотация
Piezoresistance effect of the InxGa1 –xAs nanowires was studied by scanning probe microscopy. The effect was investigated by measuring of the I–V curves with simultaneous bending of the nanowire by the probe. A modulation of the conductivity of In0.85Ga0.15As NWs induced by a mechanical stress exceeding three orders of magnitude was observed. For the explanation a model based on the surface states is presented. Such an observation opens new ways for the design of electromechanical switches with record parameters.
Об авторах
P. Alekseev
Ioffe Institute
Автор, ответственный за переписку.
Email: npoxep@gmail.com
Россия, St. Petersburg
V. Sharov
Ioffe Institute
Email: npoxep@gmail.com
Россия, St. Petersburg
M. Dunaevskiy
Ioffe Institute
Email: npoxep@gmail.com
Россия, St. Petersburg
G. Cirlin
Academic University; ITMO University
Email: npoxep@gmail.com
Россия, St. Petersburg; St. Petersburg
R. Reznik
ITMO University
Email: npoxep@gmail.com
Россия, St. Petersburg
V. Berkovits
Ioffe Institute
Email: npoxep@gmail.com
Россия, St. Petersburg
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