Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations
- 作者: Semenov A.1, Nechaev D.1, Troshkov S.1, Nashchekin A.1, Brunkov P.1, Jmerik V.1, Ivanov S.1
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隶属关系:
- Ioffe Institute
- 期: 卷 52, 编号 13 (2018)
- 页面: 1770-1774
- 栏目: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/204952
- DOI: https://doi.org/10.1134/S1063782618130158
- ID: 204952
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详细
The growth features of GaN nanorods on patterned c-sapphire substrates with a regular microcone array having a different density and base diameter in the ranges of (1–5) × 107 cm–2 and 2.5–3.5 μm, respectively, are investigated. The kinetics is studied and the selective-growth regimes are determined for single GaN nanorods with a diameter of 30–100 nm at the vertices of microcones under radically lower growth rates on their slopes. The effect of the configuration of microcones, the substrate temperature, the roughness of the initial surface, and the presence of indium as a surfactant on the degree of growth selectivity is investigated.
作者简介
A. Semenov
Ioffe Institute
编辑信件的主要联系方式.
Email: semenov@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
D. Nechaev
Ioffe Institute
Email: semenov@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
S. Troshkov
Ioffe Institute
Email: semenov@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Nashchekin
Ioffe Institute
Email: semenov@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
P. Brunkov
Ioffe Institute
Email: semenov@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Jmerik
Ioffe Institute
Email: semenov@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
S. Ivanov
Ioffe Institute
Email: semenov@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021