Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations
- Авторлар: Semenov A.1, Nechaev D.1, Troshkov S.1, Nashchekin A.1, Brunkov P.1, Jmerik V.1, Ivanov S.1
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Мекемелер:
- Ioffe Institute
- Шығарылым: Том 52, № 13 (2018)
- Беттер: 1770-1774
- Бөлім: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/204952
- DOI: https://doi.org/10.1134/S1063782618130158
- ID: 204952
Дәйексөз келтіру
Аннотация
The growth features of GaN nanorods on patterned c-sapphire substrates with a regular microcone array having a different density and base diameter in the ranges of (1–5) × 107 cm–2 and 2.5–3.5 μm, respectively, are investigated. The kinetics is studied and the selective-growth regimes are determined for single GaN nanorods with a diameter of 30–100 nm at the vertices of microcones under radically lower growth rates on their slopes. The effect of the configuration of microcones, the substrate temperature, the roughness of the initial surface, and the presence of indium as a surfactant on the degree of growth selectivity is investigated.
Авторлар туралы
A. Semenov
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: semenov@beam.ioffe.ru
Ресей, St. Petersburg, 194021
D. Nechaev
Ioffe Institute
Email: semenov@beam.ioffe.ru
Ресей, St. Petersburg, 194021
S. Troshkov
Ioffe Institute
Email: semenov@beam.ioffe.ru
Ресей, St. Petersburg, 194021
A. Nashchekin
Ioffe Institute
Email: semenov@beam.ioffe.ru
Ресей, St. Petersburg, 194021
P. Brunkov
Ioffe Institute
Email: semenov@beam.ioffe.ru
Ресей, St. Petersburg, 194021
V. Jmerik
Ioffe Institute
Email: semenov@beam.ioffe.ru
Ресей, St. Petersburg, 194021
S. Ivanov
Ioffe Institute
Email: semenov@beam.ioffe.ru
Ресей, St. Petersburg, 194021