Мақаланы E-mail арқылы жіберу Measurement of the Charge-Carrier Mobility in Gallium Arsenide Using a Near-Field Microwave Microscope by the Microwave-Magnetoresistance Method
- Авторлар: Usanov D.1, Postelga A.1, Kalyamin A.1, Sharov I.1
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Мекемелер:
- National Research Saratov State University named after N.G. Chernyshevsky
- Шығарылым: Том 52, № 13 (2018)
- Беттер: 1669-1671
- Бөлім: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204851
- DOI: https://doi.org/10.1134/S1063782618130195
- ID: 204851
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
The possibility of contactless nondestructive local measurements of the microwave carrier mobility in gallium arsenide using a near-field scanning microwave microscope and the effect of microwave magnetoresistance is shown. The need to consider the effect of a shift of the microwave field in processing the result of the measurements is noted.
Авторлар туралы
D. Usanov
National Research Saratov State University named after N.G. Chernyshevsky
Email: alexey-gtp@mail.ru
Ресей, Saratov, 410012
A. Postelga
National Research Saratov State University named after N.G. Chernyshevsky
Email: alexey-gtp@mail.ru
Ресей, Saratov, 410012
A. Kalyamin
National Research Saratov State University named after N.G. Chernyshevsky
Хат алмасуға жауапты Автор.
Email: alexey-gtp@mail.ru
Ресей, Saratov, 410012
I. Sharov
National Research Saratov State University named after N.G. Chernyshevsky
Email: alexey-gtp@mail.ru
Ресей, Saratov, 410012
