Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures

K. E. Spirin; D. M. Gaponova; K. V. Marem’yanin; V. V. Rumyantsev; V. I. Gavrilenko; N. N. Mikhailov; S. A. Dvoretsky

doi:10.1134/S1063782618120230

Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures

作者: Spirin K.¹, Gaponova D.¹, Marem’yanin K.¹, Rumyantsev V.¹, Gavrilenko V.¹, Mikhailov N.², Dvoretsky S.²
隶属关系:
1. Institute for Physics of Microstructures, Russian Academy of Sciences
2. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
期: 卷 52, 编号 12 (2018)
页面: 1586-1589
栏目: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
URL: https://journals.rcsi.science/1063-7826/article/view/204768
DOI: https://doi.org/10.1134/S1063782618120230
ID: 204768

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The effects of the residual photoconductivity in HgTe/CdHgTe (013) double quantum-well heterostructures are studied at T = 4.2 K. It is shown that the residual photoconductivity in this system has a bipolar character, i.e., both positive and negative persistent photoconductivity is present depending on the illumination wavelength.