Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates
- Авторлар: Maximov M.1, Nadtochiy A.1, Shernyakov Y.2, Payusov A.2, Vasil’ev A.3, Ustinov V.3,4, Serin A.2, Gordeev N.2, Zhukov A.1
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Мекемелер:
- St. Petersburg Academic University
- Ioffe Institute
- Submicron Heterostructures for Mircoelectronics, Research & Engineering Center, Russian Academy of Sciences
- St. Petersburg Electrotechnical University “LETI”
- Шығарылым: Том 52, № 10 (2018)
- Беттер: 1311-1316
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/204170
- DOI: https://doi.org/10.1134/S1063782618100093
- ID: 204170
Дәйексөз келтіру
Аннотация
The characteristics of lasers of the 1.44–1.46-μm optical range grown on GaAs substrates using a metamorphic buffer are studied. The active region of the laser contains 10 rows of InAs/In0.4Ga0.6As/In0.2Ga0.8As quantum dots. It is shown that the use of special selective high-temperature annealing along with the application of short-period In0.2Ga0.8As/In0.2Al0.3Ga0.5As short-period superlattices makes it possible to substantially decrease the density of threading dislocations in the active region. A threshold current density of 1300 A cm–2, external differential quantum efficiency of 38%, and maximal pulsed-mode output power of 13 W are attained for a laser with a broad area 3 mm in length.
Авторлар туралы
M. Maximov
St. Petersburg Academic University
Хат алмасуға жауапты Автор.
Email: maximov@beam.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
A. Nadtochiy
St. Petersburg Academic University
Email: maximov@beam.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
Yu. Shernyakov
Ioffe Institute
Email: maximov@beam.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
A. Payusov
Ioffe Institute
Email: maximov@beam.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
A. Vasil’ev
Submicron Heterostructures for Mircoelectronics, Research & Engineering Center,Russian Academy of Sciences
Email: maximov@beam.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
V. Ustinov
Submicron Heterostructures for Mircoelectronics, Research & Engineering Center,Russian Academy of Sciences; St. Petersburg Electrotechnical University “LETI”
Email: maximov@beam.ioffe.rssi.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197376
A. Serin
Ioffe Institute
Email: maximov@beam.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
N. Gordeev
Ioffe Institute
Email: maximov@beam.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
A. Zhukov
St. Petersburg Academic University
Email: maximov@beam.ioffe.rssi.ru
Ресей, St. Petersburg, 194021