Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs
- Авторы: Volkov V.1, Kogan L.2, Turkin A.1, Yunovich A.1
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Учреждения:
- Moscow State University
- Scientific-and-Production Center “Optel”
- Выпуск: Том 52, № 10 (2018)
- Страницы: 1293-1297
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/204145
- DOI: https://doi.org/10.1134/S1063782618100226
- ID: 204145
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Аннотация
The electroluminescence spectra of high-power light-emitting diodes (LEDs) based on p–n heterostructures of the InGaN/AlGaN/GaN type emitting in the visible short-wavelength and ultraviolet spectral regions (the range from 370 to 460 nm) are investigated. The shape of spectra is described by a model taking into account a two-dimensional combined density of states and potential fluctuations. Additional long-wavelength peaks are found in emission spectra. The emission power of ultraviolet and violet LEDs reaches 233 mW at a current of 350 mA, and the external quantum yield reaches 23% at the maximum (near a current of 100 mA).
Об авторах
V. Volkov
Moscow State University
Email: andrey@turkin.su
Россия, Moscow, 119991
L. Kogan
Scientific-and-Production Center “Optel”
Email: andrey@turkin.su
Россия, Moscow, 105187
A. Turkin
Moscow State University
Автор, ответственный за переписку.
Email: andrey@turkin.su
Россия, Moscow, 119991
A. Yunovich
Moscow State University
Email: andrey@turkin.su
Россия, Moscow, 119991