Investigation of the Dielectric Permittivity and Electrical Conductivity of Ce2S3
- 作者: Zalessky V.1, Kaminski V.1, Hirai S.2, Kubota Y.2, Sharenkova N.1
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隶属关系:
- Ioffe Institute
- Muroran Institute of Technology
- 期: 卷 52, 编号 4 (2018)
- 页面: 411-413
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7826/article/view/202702
- DOI: https://doi.org/10.1134/S1063782618040322
- ID: 202702
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详细
The rare-earth semiconductor β-Ce2S3 compound samples were synthesized and their dielectric permittivity and electrical conductivity were measured in the temperature range 90–400 K. The energy-band structure has been determined. It is shown that the long-known large electrical parameter spread of semiconductor compounds close in composition to Ce2S3 is explained by the structure of impurity donor levels formed by cerium atoms and ions with different ionization degrees.
作者简介
V. Zalessky
Ioffe Institute
Email: Vladimir.Kaminski@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Kaminski
Ioffe Institute
编辑信件的主要联系方式.
Email: Vladimir.Kaminski@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
S. Hirai
Muroran Institute of Technology
Email: Vladimir.Kaminski@mail.ioffe.ru
日本, Muroran, Hokkaido, 050-8585
Y. Kubota
Muroran Institute of Technology
Email: Vladimir.Kaminski@mail.ioffe.ru
日本, Muroran, Hokkaido, 050-8585
N. Sharenkova
Ioffe Institute
Email: Vladimir.Kaminski@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021