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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Issue Title File
Vol 52, No 4 (2018) Investigation of the Dielectric Permittivity and Electrical Conductivity of Ce2S3 PDF
(Eng)
Zalessky V.G., Kaminski V.V., Hirai S., Kubota Y., Sharenkova N.V.
Vol 52, No 4 (2018) Structural, Mechanical and Thermodynamic Properties of Cu2CoXS4 (X = Si, Ge, Sn) Studied by Density Functional Theory PDF
(Eng)
Dong Y.J., Gao Y.L.
Vol 52, No 4 (2018) Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies PDF
(Eng)
Reddy B.P., Teja K.B., Kandpal K.
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