Enviar artigo por via de e-mail Deep Radiation-Induced Defect Centers Created by a Fast Neutron Flux in CdZnTe Single Crystals
- Autores: Plyatsko S.1, Rashkovetskyi L.1
-
Afiliações:
- Lashkarev Institute of Semiconductor Physics
- Edição: Volume 52, Nº 3 (2018)
- Páginas: 305-309
- Seção: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/202550
- DOI: https://doi.org/10.1134/S1063782618030181
- ID: 202550
Citar
Acesso aberto
Acesso está concedido
Somente assinantes
Resumo
The effect of a fast neutron flux (Φ = 1014–1015 cm–2) on the electrical and photoluminescence properties of p-CdZnTe single crystals is studied. Isothermal annealing is performed (T = 400–500 K), and the activation energy of the dissociation of radiation-induced defects is determined at ED ≈ 0.75 eV.
Sobre autores
S. Plyatsko
Lashkarev Institute of Semiconductor Physics
Autor responsável pela correspondência
Email: plyatsko@isp.kiev.ua
Ucrânia, Kyiv, 03028
L. Rashkovetskyi
Lashkarev Institute of Semiconductor Physics
Email: plyatsko@isp.kiev.ua
Ucrânia, Kyiv, 03028
