Electrical and thermal properties of photoconductive antennas based on InxGa1 – xAs (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation
- Авторы: Ponomarev D.1, Khabibullin R.1, Yachmenev A.1, Pavlov A.1, Slapovskiy D.1, Glinskiy I.1,2, Lavrukhin D.1, Ruban O.1, Maltsev P.1
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Учреждения:
- Institute of Ultra-High-Frequency Semiconductor Electronics
- Moscow Technological University (MIREA)
- Выпуск: Том 51, № 9 (2017)
- Страницы: 1218-1223
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/201228
- DOI: https://doi.org/10.1134/S1063782617090160
- ID: 201228
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Аннотация
The results of studies of the electrical and thermal properties of photoconductive antennas for terahertz-radiation generation are reported; these antennas are fabricated on the basis of low-temperaturegrown GaAs (LT-GaAs) and InxGa1 – xAs with an increased content of indium (x > 0.3). It is shown that the power of Joule heating PH due to the effect of “dark” current in InxGa1 – xAs exceeds the same quantity in LT-GaAs by three–five times. This is due to the high intrinsic conductivity of InxGa1 – xAs at x > 0.38. Heatremoval equipment for the photoconductive antenna has been developed and fabricated. The results of numerical simulation show that the use of a heat sink makes it possible to reduce the operating temperature of the antenna based on LT-GaAs by 16%, of the antenna based on In0.38Ga0.62As by 40%, and for antennas based on In0.53Ga0.47As by 64%.
Об авторах
D. Ponomarev
Institute of Ultra-High-Frequency Semiconductor Electronics
Автор, ответственный за переписку.
Email: ponomarev_dmitr@mail.ru
Россия, Moscow, 117105
R. Khabibullin
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Россия, Moscow, 117105
A. Yachmenev
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Россия, Moscow, 117105
A. Pavlov
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Россия, Moscow, 117105
D. Slapovskiy
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Россия, Moscow, 117105
I. Glinskiy
Institute of Ultra-High-Frequency Semiconductor Electronics; Moscow Technological University (MIREA)
Email: ponomarev_dmitr@mail.ru
Россия, Moscow, 117105; Moscow, 119454
D. Lavrukhin
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Россия, Moscow, 117105
O. Ruban
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Россия, Moscow, 117105
P. Maltsev
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Россия, Moscow, 117105