Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon
- 作者: Sobolev N.1, Kalyadin A.1, Shek E.1, Shtel’makh K.1,2
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隶属关系:
- Ioffe Institute
- Peter the Great St. Petersburg Polytechnic University
- 期: 卷 51, 编号 9 (2017)
- 页面: 1133-1135
- 栏目: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/201103
- DOI: https://doi.org/10.1134/S1063782617090202
- ID: 201103
如何引用文章
详细
Influence of the measurement temperature in the range 5–130 K on the photoluminescence spectra of (113) defects in Si implanted with 350-keV oxygen ions at doses of 3.7 × 1014 cm–2 and annealed at a temperature of 700°C for 1 h in a chlorine-containing atmosphere is studied. The temperature dependence of the line intensity is characterized by portions of intensity increase with an activation energy of 23.1 meV and intensity quenching with activation energies of 41.9 and 178.3 meV. With increasing temperature, the lines are shifted to longer wavelengths and their FWHM increases.
作者简介
N. Sobolev
Ioffe Institute
编辑信件的主要联系方式.
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021
A. Kalyadin
Ioffe Institute
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021
E. Shek
Ioffe Institute
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021
K. Shtel’makh
Ioffe Institute; Peter the Great St. Petersburg Polytechnic University
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 195251