High-temperature diffusion of magnesium in dislocation-free silicon
- Авторлар: Shuman V.1, Astrov Y.1, Lodygin A.1, Portsel L.1
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Мекемелер:
- Ioffe Institute
- Шығарылым: Том 51, № 8 (2017)
- Беттер: 1031-1033
- Бөлім: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/200961
- DOI: https://doi.org/10.1134/S1063782617080292
- ID: 200961
Дәйексөз келтіру
Аннотация
The diffusion doping of dislocation-free single-crystal silicon with magnesium is studied in the temperature range 1000–1200°C. The conventional sandwich method is used as the doping method. It is found that the diffusion coefficient of magnesium is described by a universal Arrhenius curve in the extended temperature range 600–1200°C, with data earlier obtained for the range 600–800°C taken into consideration. The relatively low activation energy of diffusion transport (1.83 eV) is indicative of the interstitial mechanism of impurity diffusion.
Авторлар туралы
V. Shuman
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: Shuman@mail.ioffe.ru
Ресей, St. Petersburg, 194021
Yu. Astrov
Ioffe Institute
Email: Shuman@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Lodygin
Ioffe Institute
Email: Shuman@mail.ioffe.ru
Ресей, St. Petersburg, 194021
L. Portsel
Ioffe Institute
Email: Shuman@mail.ioffe.ru
Ресей, St. Petersburg, 194021