Transport properties of heteroepitaxial films based on bismuth telluride in strong magnetic fields

L. N. Lukyanova; Yu. A. Boikov; O. A. Usov; V. A. Danilov; M. P. Volkov

doi:10.1134/S1063782617070259

Transport properties of heteroepitaxial films based on bismuth telluride in strong magnetic fields

Авторы: Lukyanova L.¹, Boikov Y.¹, Usov O.¹, Danilov V.¹, Volkov M.¹
Учреждения:
1. Ioffe Institute
Выпуск: Том 51, № 7 (2017)
Страницы: 843-846
Раздел: XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016
URL: https://journals.rcsi.science/1063-7826/article/view/200150
DOI: https://doi.org/10.1134/S1063782617070259
ID: 200150

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Аннотация

The temperature and magnetic-field dependences of the galvanomagnetic properties of n-Bi₂Te₃ heteroepitaxial films in magnetic fields to 14 T at low temperatures are studied. It is shown that steps in the magnetic-field dependences of the quantum Hall effect and the plateau in the temperature dependences of the magnetoresistance of films are caused by topological surface states of Dirac fermions.