Polarization-modulation diagnostics of thermal stresses in an integrated pressure transducer
- Авторы: Mikhailenko I.1, Orlov A.2, Serdega B.1
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Учреждения:
- Lashkaryov Institute of Semiconductor Physics
- National Technical University “Kyiv Polytechnical Institute”
- Выпуск: Том 51, № 4 (2017)
- Страницы: 498-502
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199759
- DOI: https://doi.org/10.1134/S1063782617040145
- ID: 199759
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Аннотация
A semiconductor pressure transducer consisting of a sensing resistor implanted into a silicon membrane as an elastic mechanical element is studied by the modulation polarimetry technique. Internal mechanical stresses are detected. The coordinate distributions of uniaxial stresses are measured in two cases: stresses remaining from local crystal doping inhomogeneities and stresses caused by heating by flowing current. The coordinate distribution of the temperature caused by the heat flux released by the resistor current is determined by double integration of the stress function, taking into account corresponding boundary conditions.
Об авторах
I. Mikhailenko
Lashkaryov Institute of Semiconductor Physics
Email: bserdega@isp.kiev.ua
Украина, pr. Nauki 41, Kyiv, 03028
A. Orlov
National Technical University “Kyiv Polytechnical Institute”
Email: bserdega@isp.kiev.ua
Украина, pr. Pobedy 37, Kyiv, 03057
B. Serdega
Lashkaryov Institute of Semiconductor Physics
Автор, ответственный за переписку.
Email: bserdega@isp.kiev.ua
Украина, pr. Nauki 41, Kyiv, 03028