Effect of energy density on the target on SnO2:Sb film properties when using a high-speed particle separator
- 作者: Parshina L.1, Khramova O.1, Novodvorsky O.1, Lotin A.1, Petukhov I.2, Putilin F.2, Shcherbachev K.3
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隶属关系:
- Institute of Problems of Laser and Information Technologies
- Moscow State University
- National University of Science and Technology “MISIS”
- 期: 卷 51, 编号 3 (2017)
- 页面: 407-411
- 栏目: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/199675
- DOI: https://doi.org/10.1134/S1063782617030228
- ID: 199675
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详细
SnO2:Sb thin films are grown by pulsed laser deposition with high-speed particle separation on quartz-glass substrates without post-deposition annealing under different deposition conditions in the range of the energy densities on the target from 3.4 to 6.8 J/cm2. Their optical, structural, and electrical properties are studied. It is found that the energy density on the target affects the SnO2:Sb film conductivity and transmittance. The optimum conditions of film growth by the droplet-free pulsed laser deposition method are determined. A resistivity minimum of 1.2 × 10–3 Ω cm is observed at an energy density on the target of 4.6 J/cm2, a substrate temperature of 300°C, and an oxygen pressure of 20 mTorr in the vacuum chamber during deposition.
作者简介
L. Parshina
Institute of Problems of Laser and Information Technologies
编辑信件的主要联系方式.
Email: ParshinaLiubov@mail.ru
俄罗斯联邦, ul. Svyatoozerskaya 1, Shatura, Moscow oblast, 140700
O. Khramova
Institute of Problems of Laser and Information Technologies
Email: ParshinaLiubov@mail.ru
俄罗斯联邦, ul. Svyatoozerskaya 1, Shatura, Moscow oblast, 140700
O. Novodvorsky
Institute of Problems of Laser and Information Technologies
Email: ParshinaLiubov@mail.ru
俄罗斯联邦, ul. Svyatoozerskaya 1, Shatura, Moscow oblast, 140700
A. Lotin
Institute of Problems of Laser and Information Technologies
Email: ParshinaLiubov@mail.ru
俄罗斯联邦, ul. Svyatoozerskaya 1, Shatura, Moscow oblast, 140700
I. Petukhov
Moscow State University
Email: ParshinaLiubov@mail.ru
俄罗斯联邦, Moscow, 119991
F. Putilin
Moscow State University
Email: ParshinaLiubov@mail.ru
俄罗斯联邦, Moscow, 119991
K. Shcherbachev
National University of Science and Technology “MISIS”
Email: ParshinaLiubov@mail.ru
俄罗斯联邦, Leninskii pr. 4, Moscow, 119049