Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
- Авторлар: Zakgeim A.L.1, Il’inskaya N.D.2, Karandashev S.A.2, Lavrov A.A.2,3, Matveev B.A.2, Remennyy M.A.2, Stus’ N.M.2, Usikova A.A.2, Cherniakov A.E.1
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Мекемелер:
- Scientific and Technological Center for Microelectronics
- Ioffe Institute
- Open Company “IoffeLED”
- Шығарылым: Том 51, № 2 (2017)
- Беттер: 260-266
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199514
- DOI: https://doi.org/10.1134/S1063782617020269
- ID: 199514
Дәйексөз келтіру
Аннотация
The spatial distribution of equilibrium and nonequilibrium (including luminescent) IR (infrared) radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures (λmax = 3.4 μm) is measured and analyzed; the structural features of the photodiodes, including the reflective properties of the ohmic contacts, are taken into account. Optical area enhancement due to multiple internal reflection in photodiodes with different geometric characteristics is estimated.
Авторлар туралы
A. Zakgeim
Scientific and Technological Center for Microelectronics
Email: ioffeled@mail.ru
Ресей, St. Petersburg, 194021
N. Il’inskaya
Ioffe Institute
Email: ioffeled@mail.ru
Ресей, St. Petersburg, 194021
S. Karandashev
Ioffe Institute
Email: ioffeled@mail.ru
Ресей, St. Petersburg, 194021
A. Lavrov
Ioffe Institute; Open Company “IoffeLED”
Хат алмасуға жауапты Автор.
Email: ioffeled@mail.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
B. Matveev
Ioffe Institute
Email: ioffeled@mail.ru
Ресей, St. Petersburg, 194021
M. Remennyy
Ioffe Institute
Email: ioffeled@mail.ru
Ресей, St. Petersburg, 194021
N. Stus’
Ioffe Institute
Email: ioffeled@mail.ru
Ресей, St. Petersburg, 194021
A. Usikova
Ioffe Institute
Email: ioffeled@mail.ru
Ресей, St. Petersburg, 194021
A. Cherniakov
Scientific and Technological Center for Microelectronics
Email: ioffeled@mail.ru
Ресей, St. Petersburg, 194021
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