Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors
- 作者: Yurkov S.1, Mnatsakanov T.1, Levinshtein M.2, Tandoev A.1, Palmour J.3
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隶属关系:
- All-Russia Electrotechnical Institute
- Ioffe Physical–Technical Institute
- Cree Inc.
- 期: 卷 51, 编号 2 (2017)
- 页面: 225-231
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199479
- DOI: https://doi.org/10.1134/S1063782617020257
- ID: 199479
如何引用文章
详细
The impact of non-1D effects caused by the spread of the gate current in the base layer on the gate switch-on current in 4H-SiC thyristors is considered. It is shown that a new switching mechanism implemented in 4H-SiC thyristors results in the dependence of the gate switch-on current on the thyristor parameters, with this dependence being fundamentally different from that in conventional silicon thyristors.
作者简介
S. Yurkov
All-Russia Electrotechnical Institute
Email: melev@nimis.ioffe.rssi.ru
俄罗斯联邦, Moscow, 111250
T. Mnatsakanov
All-Russia Electrotechnical Institute
Email: melev@nimis.ioffe.rssi.ru
俄罗斯联邦, Moscow, 111250
M. Levinshtein
Ioffe Physical–Technical Institute
编辑信件的主要联系方式.
Email: melev@nimis.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021
A. Tandoev
All-Russia Electrotechnical Institute
Email: melev@nimis.ioffe.rssi.ru
俄罗斯联邦, Moscow, 111250
J. Palmour
Cree Inc.
Email: melev@nimis.ioffe.rssi.ru
美国, 4600 Silicon Dr., Durham, NC, 27703