Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate
- 作者: Nekorkin S.1, Zvonkov B.1, Baidus N.1, Dikareva N.1, Vikhrova O.1, Afonenko A.2, Ushakov D.2
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隶属关系:
- Physicotechnical Research Institute
- Belarussian State University
- 期: 卷 51, 编号 1 (2017)
- 页面: 73-77
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199328
- DOI: https://doi.org/10.1134/S1063782617010158
- ID: 199328
如何引用文章
详细
The radiative properties of InGaAs/GaAs/InGaP laser structures with radiation output through the substrate depending on the number of quantum wells in the active region and laser diodes on their basis are investigated. It is established that the presence of six–eight quantum wells in the active region is optimum from the viewpoint of observable values of the threshold current and the output optical power of lasers.
作者简介
S. Nekorkin
Physicotechnical Research Institute
Email: dnat@ro.ru
俄罗斯联邦, Nizhny Novgorod, 603950
B. Zvonkov
Physicotechnical Research Institute
Email: dnat@ro.ru
俄罗斯联邦, Nizhny Novgorod, 603950
N. Baidus
Physicotechnical Research Institute
Email: dnat@ro.ru
俄罗斯联邦, Nizhny Novgorod, 603950
N. Dikareva
Physicotechnical Research Institute
编辑信件的主要联系方式.
Email: dnat@ro.ru
俄罗斯联邦, Nizhny Novgorod, 603950
O. Vikhrova
Physicotechnical Research Institute
Email: dnat@ro.ru
俄罗斯联邦, Nizhny Novgorod, 603950
A. Afonenko
Belarussian State University
Email: dnat@ro.ru
白俄罗斯, Minsk, 220030
D. Ushakov
Belarussian State University
Email: dnat@ro.ru
白俄罗斯, Minsk, 220030