Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate


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详细

The radiative properties of InGaAs/GaAs/InGaP laser structures with radiation output through the substrate depending on the number of quantum wells in the active region and laser diodes on their basis are investigated. It is established that the presence of six–eight quantum wells in the active region is optimum from the viewpoint of observable values of the threshold current and the output optical power of lasers.

作者简介

S. Nekorkin

Physicotechnical Research Institute

Email: dnat@ro.ru
俄罗斯联邦, Nizhny Novgorod, 603950

B. Zvonkov

Physicotechnical Research Institute

Email: dnat@ro.ru
俄罗斯联邦, Nizhny Novgorod, 603950

N. Baidus

Physicotechnical Research Institute

Email: dnat@ro.ru
俄罗斯联邦, Nizhny Novgorod, 603950

N. Dikareva

Physicotechnical Research Institute

编辑信件的主要联系方式.
Email: dnat@ro.ru
俄罗斯联邦, Nizhny Novgorod, 603950

O. Vikhrova

Physicotechnical Research Institute

Email: dnat@ro.ru
俄罗斯联邦, Nizhny Novgorod, 603950

A. Afonenko

Belarussian State University

Email: dnat@ro.ru
白俄罗斯, Minsk, 220030

D. Ushakov

Belarussian State University

Email: dnat@ro.ru
白俄罗斯, Minsk, 220030


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