Optimization of the parameters of power sources excited by β-radiation
- Autores: Bulyarskiy S.1, Lakalin A.1, Abanin I.2, Amelichev V.2, Svetuhin V.3
-
Afiliações:
- Institute of Nanotechnology of Microelectronics
- Technological Center
- Ulyanovsk State University
- Edição: Volume 51, Nº 1 (2017)
- Páginas: 66-72
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199323
- DOI: https://doi.org/10.1134/S1063782617010055
- ID: 199323
Citar
Resumo
The experimental results and calculations of the efficiency of the energy conversion of Ni-63 β-radiation sources to electricity using silicon p–i–n diodes are presented. All calculations are performed taking into account the energy distribution of β-electrons. An expression for the converter open-circuit voltage is derived taking into account the distribution of high-energy electrons in the space-charge region of the p–i–n diode. Ways of optimizing the converter parameters by improving the technology of diodes and optimizing the emitter active layer and i-region thicknesses of the semiconductor converter are shown. The distribution of the conversion losses to the source and radiation detector and the losses to high-energy electron entry into the semiconductor is calculated. Experimental values of the conversion efficiency of 0.4–0.7% are in good agreement with the calculated parameters.
Sobre autores
S. Bulyarskiy
Institute of Nanotechnology of Microelectronics
Autor responsável pela correspondência
Email: bulyar2954@mail.ru
Rússia, Leninskii pr. 32a, Moscow, 119991
A. Lakalin
Institute of Nanotechnology of Microelectronics
Email: bulyar2954@mail.ru
Rússia, Leninskii pr. 32a, Moscow, 119991
I. Abanin
Technological Center
Email: bulyar2954@mail.ru
Rússia, pr. 4806, bld. 5, Zelenograd, Moscow, 124498
V. Amelichev
Technological Center
Email: bulyar2954@mail.ru
Rússia, pr. 4806, bld. 5, Zelenograd, Moscow, 124498
V. Svetuhin
Ulyanovsk State University
Email: bulyar2954@mail.ru
Rússia, ul. L. Tolstogo 42, Ulyanovsk, 432000