Polarization of the induced THz emission of donors in silicon

K. A. Kovalevsky; R. Kh. Zhukavin; V. V. Tsyplenkov; S. G. Pavlov; H. -W. Hübers; N. V. Abrosimov; V. N. Shastin

doi:10.1134/S1063782616120101

Polarization of the induced THz emission of donors in silicon

作者: Kovalevsky K.A.¹, Zhukavin R.K.¹, Tsyplenkov V.V.¹, Pavlov S.G.², Hübers H.-.²^,3, Abrosimov N.V.⁴, Shastin V.N.⁴
隶属关系:
1. Institute for Physics of Microstructures
2. Humboldt University of Berlin
3. Institute of Optical Sensor Systems DLR
4. Leibniz Institute for Crystal Growth
期: 卷 50, 编号 12 (2016)
页面: 1673-1677
栏目: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
URL: https://journals.rcsi.science/1063-7826/article/view/199097
DOI: https://doi.org/10.1134/S1063782616120101
ID: 199097

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The polarization of the terahertz (4.9–6.4 THz) stimulated emission of Group-V (Sb, P, As, Bi) donors in single-crystal silicon under pumping (photoionization) by a CO₂ laser (photon energy 117 meV), depending on the uniaxial compressive deformation of the crystal along the [100] axis, is experimentally investigated. The influence of the field direction of the pump wave on its efficiency is discussed.