Мақаланы E-mail арқылы жіберу On a new method of heterojunction formation in III–V nanowires
- Авторлар: Sibirev N.1,2, Koryakin A.1,2, Dubrovskii V.1,3,4,5
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Мекемелер:
- St. Petersburg National Research Academic University—Nanotechnology Research and Education Center
- St. Petersburg State Polytechnic University
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- St. Petersburg State University
- Ioffe Physical–Technical Institute
- Шығарылым: Том 50, № 12 (2016)
- Беттер: 1566-1568
- Бөлім: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198761
- DOI: https://doi.org/10.1134/S1063782616120198
- ID: 198761
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
The process of the formation of axial heterostructures in nanowires is considered on the basis of the vapor–liquid–solid model of growth. A new method of heterostructure formation in (Al, Ga)As nanowires by varying the arsenic flux is proposed.
Авторлар туралы
N. Sibirev
St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; St. Petersburg State Polytechnic University
Хат алмасуға жауапты Автор.
Email: NickSibirev@yandex.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 195251
A. Koryakin
St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; St. Petersburg State Polytechnic University
Email: NickSibirev@yandex.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 195251
V. Dubrovskii
St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics; St. Petersburg State University; Ioffe Physical–Technical Institute
Email: NickSibirev@yandex.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 199034; St. Petersburg, 194021
