Effect of the chemical composition of Cu–In–Ga–Se layers on the photoconductivity and conversion efficiency of CdS/CIGSe solar cells
- Авторы: Novikov G.1, Tsai W.2, Bocharov K.1, Rabenok E.1, Jeng M.2, Chang L.2, Feng W.1, Ao J.3, Sun Y.3
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Учреждения:
- Institute of Problems of Chemical Physics
- Department of Electronic Engineering
- Institute of Photoelectronic Thin Film Device and Technology
- Выпуск: Том 50, № 10 (2016)
- Страницы: 1344-1351
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/198067
- DOI: https://doi.org/10.1134/S1063782616100195
- ID: 198067
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Аннотация
The effect of the [Ga]/[In+Ga] ratio of gallium and indium on the microwave photoconductivity of Cu–In–Ga–Se (CIGSe) films and on the efficiency of solar cells fabricated in accordance with the same technology is investigated. According to the observations of a field-emission scanning electron microscopy (FESEM), the grain size decreases with increasing Ga content. With increasing gallium content in the samples, the photogenerated-electron lifetime and the activation energy of the microwave photoconductivity also decrease. The changes in the activation energy of the through conduction in darkness are less than 20%. Analysis of the obtained data shows that the known effect of the gallium gradient on the efficiency should be associated with modification of the internal structure of grains instead of with their boundaries.
Об авторах
G. Novikov
Institute of Problems of Chemical Physics
Автор, ответственный за переписку.
Email: ngf@icp.ac.ru
Россия, Chernogolovka, 142432
Wei-Tao Tsai
Department of Electronic Engineering
Email: ngf@icp.ac.ru
Тайвань, Taoyuan
K. Bocharov
Institute of Problems of Chemical Physics
Email: ngf@icp.ac.ru
Россия, Chernogolovka, 142432
E. Rabenok
Institute of Problems of Chemical Physics
Email: ngf@icp.ac.ru
Россия, Chernogolovka, 142432
Ming-Jer Jeng
Department of Electronic Engineering
Email: ngf@icp.ac.ru
Тайвань, Taoyuan
Liann-Be Chang
Department of Electronic Engineering
Email: ngf@icp.ac.ru
Тайвань, Taoyuan
Wu-Shiung Feng
Institute of Problems of Chemical Physics
Email: ngf@icp.ac.ru
Россия, Chernogolovka, 142432
Jian-Ping Ao
Institute of Photoelectronic Thin Film Device and Technology
Email: ngf@icp.ac.ru
Китай, Tianjin
Yun Sun
Institute of Photoelectronic Thin Film Device and Technology
Email: ngf@icp.ac.ru
Китай, Tianjin