GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics
- Авторы: Khvostikov V.1, Sorokina S.1, Khvostikova O.1, Levin R.1, Pushnyi B.1, Timoshina N.1, Andreev V.1
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Учреждения:
- Ioffe Physical–Technical Institute
- Выпуск: Том 50, № 10 (2016)
- Страницы: 1338-1343
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/198058
- DOI: https://doi.org/10.1134/S1063782616100146
- ID: 198058
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Аннотация
Photovoltaic converters of laser light with a wavelength of λ = 1550 nm are developed using liquidphase epitaxy (LPE), metal-organic chemical-vapor deposition (MOCVD), and diffusion from the gas phase into the n-GaSb substrate. Photocells with an area of S of 4, 12.2, and 100 mm2 are fabricated and tested. The characteristics of the samples produced by different methods are compared. The monochromatic efficiency is found to be 38.7% for the best converters (with S = 12.2 mm2) at a laser power of 1.4 W.
Об авторах
V. Khvostikov
Ioffe Physical–Technical Institute
Автор, ответственный за переписку.
Email: vlkhv@scell.ioffe.ru
Россия, St. Petersburg, 194021
S. Sorokina
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Россия, St. Petersburg, 194021
O. Khvostikova
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Россия, St. Petersburg, 194021
R. Levin
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Россия, St. Petersburg, 194021
B. Pushnyi
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Россия, St. Petersburg, 194021
N. Timoshina
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Россия, St. Petersburg, 194021
V. Andreev
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Россия, St. Petersburg, 194021