Dynamic thermoelectric model of a light-emitting structure with a current spreading layer
- 作者: Sergeev V.1, Hodakov A.1
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隶属关系:
- Kotel’nikov Institute of Radio Engineering and Electronics (Ulyanovsk Branch)
- 期: 卷 50, 编号 8 (2016)
- 页面: 1079-1084
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197677
- DOI: https://doi.org/10.1134/S1063782616080224
- ID: 197677
如何引用文章
详细
The non-stationary thermoelectric model of the axisymmetric heterostructure of a light-emitting device is considered taking into account positive feedback mechanisms and the effect of the current-spreading-layer resistance. Taking into account the current localization effect, the nonuniform distribution of the heterojunction current density over the heterostructure area is determined. The non-stationary thermal conductivity equation with temperature-dependent current density flowing into the heterojunction is solved by the numerical–analytical iterative method. Based on the developed model, the current density, temperature, and thermomechanical stress distributions for the heterojunction plane are determined.
作者简介
V. Sergeev
Kotel’nikov Institute of Radio Engineering and Electronics (Ulyanovsk Branch)
编辑信件的主要联系方式.
Email: ufire@mv.ru
俄罗斯联邦, ul. Goncharova 48, Ulyanovsk, 432071
A. Hodakov
Kotel’nikov Institute of Radio Engineering and Electronics (Ulyanovsk Branch)
Email: ufire@mv.ru
俄罗斯联邦, ul. Goncharova 48, Ulyanovsk, 432071