Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen
- Autores: Ivanova E.1, Sitnikova A.1, Aleksandrov O.2, Zamoryanskaya M.1
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Afiliações:
- Ioffe Physical–Technical Institute
- St. Petersburg State Electrotechnical University LETI
- Edição: Volume 50, Nº 6 (2016)
- Páginas: 791-794
- Seção: Amorphous, Vitreous, and Organic Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197264
- DOI: https://doi.org/10.1134/S1063782616060099
- ID: 197264
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Resumo
It is found for the first time that silicon nanoclusters are formed in the surface layer of thermal silicon dioxide under high-temperature annealing (T = 1150°C) in dried nitrogen. Analysis of the cathodoluminescence spectra shows that an imperfect surface layer appears upon such annealing of silicon dioxide, with silicon nanoclusters formed in this layer upon prolonged annealing. Transmission electron microscopy demonstrated that the silicon clusters are 3–5.5 nm in size and lie at a depth of about 10 nm from the surface. Silicon from the thermal film of silicon dioxide serves as the material from which the silicon nanoclusters are formed. This method of silicon-nanocluster formation is suggested for the first time.
Sobre autores
E. Ivanova
Ioffe Physical–Technical Institute
Autor responsável pela correspondência
Email: Ivanova@mail.ioffe.ru
Rússia, St. Petersburg, 194021
A. Sitnikova
Ioffe Physical–Technical Institute
Email: Ivanova@mail.ioffe.ru
Rússia, St. Petersburg, 194021
O. Aleksandrov
St. Petersburg State Electrotechnical University LETI
Email: Ivanova@mail.ioffe.ru
Rússia, St. Petersburg, 197376
M. Zamoryanskaya
Ioffe Physical–Technical Institute
Email: Ivanova@mail.ioffe.ru
Rússia, St. Petersburg, 194021