Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen
- Авторлар: Ivanova E.1, Sitnikova A.1, Aleksandrov O.2, Zamoryanskaya M.1
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Мекемелер:
- Ioffe Physical–Technical Institute
- St. Petersburg State Electrotechnical University LETI
- Шығарылым: Том 50, № 6 (2016)
- Беттер: 791-794
- Бөлім: Amorphous, Vitreous, and Organic Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197264
- DOI: https://doi.org/10.1134/S1063782616060099
- ID: 197264
Дәйексөз келтіру
Аннотация
It is found for the first time that silicon nanoclusters are formed in the surface layer of thermal silicon dioxide under high-temperature annealing (T = 1150°C) in dried nitrogen. Analysis of the cathodoluminescence spectra shows that an imperfect surface layer appears upon such annealing of silicon dioxide, with silicon nanoclusters formed in this layer upon prolonged annealing. Transmission electron microscopy demonstrated that the silicon clusters are 3–5.5 nm in size and lie at a depth of about 10 nm from the surface. Silicon from the thermal film of silicon dioxide serves as the material from which the silicon nanoclusters are formed. This method of silicon-nanocluster formation is suggested for the first time.
Авторлар туралы
E. Ivanova
Ioffe Physical–Technical Institute
Хат алмасуға жауапты Автор.
Email: Ivanova@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Sitnikova
Ioffe Physical–Technical Institute
Email: Ivanova@mail.ioffe.ru
Ресей, St. Petersburg, 194021
O. Aleksandrov
St. Petersburg State Electrotechnical University LETI
Email: Ivanova@mail.ioffe.ru
Ресей, St. Petersburg, 197376
M. Zamoryanskaya
Ioffe Physical–Technical Institute
Email: Ivanova@mail.ioffe.ru
Ресей, St. Petersburg, 194021