Anomalous thermoelectric power in Hg3In2Te6 crystals
- Авторы: Grushka O.1
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Учреждения:
- Fed’kovich National University
- Выпуск: Том 50, № 6 (2016)
- Страницы: 719-721
- Раздел: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197194
- DOI: https://doi.org/10.1134/S1063782616060075
- ID: 197194
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Аннотация
Based on data on the Hall coefficient, it is shown that the existence of potential barriers in the region of impurity conductivity of highly compensated Hg3In2Te6 crystals is possible. The role of barriers in the anomalous behavior of transport phenomena is discussed qualitatively. Extremely large values of the thermoelectric power are related to the combination of thermoelectric powers of contact potentials for regions with different concentrations of electrons.
Об авторах
O. Grushka
Fed’kovich National University
Автор, ответственный за переписку.
Email: legru@mail.ru
Украина, Chernivtsi, 58000