Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate

V. Ya. Aleshkin; A. A. Dubinov; K. E. Kudryavtsev; P. A. Yunin; M. N. Drozdov; O. V. Vikhrova; S. M. Nekorkin; B. N. Zvonkov

doi:10.1134/S106378261605002X

Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate

作者: Aleshkin V.¹^,2, Dubinov A.¹^,2, Kudryavtsev K.¹^,2, Yunin P.¹^,2, Drozdov M.¹^,2, Vikhrova O.³, Nekorkin S.³, Zvonkov B.³
隶属关系:
1. Institute for Physics of Microstructures
2. Lobachevsky Nizhny Novgorod State University
3. Physical–Technical Research Institute
期: 卷 50, 编号 5 (2016)
页面: 586-589
栏目: Spectroscopy, Interaction with Radiation
URL: https://journals.rcsi.science/1063-7826/article/view/197057
DOI: https://doi.org/10.1134/S106378261605002X
ID: 197057

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The structural and optical properties of a metamorphic GaAsSb bulk layer grown on a GaAs substrate are studied. As the excitation power density (at a wavelength of 0.65 μm) reaches 9 kW cm⁻² at liquid-nitrogen temperature and 230 kW cm⁻² at room temperature, a superluminescence signal is observed at wave-lengths of 0.943 and 0.992 μm, respectively.