Laser-assisted simulation of transient radiation effects in heterostructure components based on AIIIBV semiconductor compounds
- 作者: Gromov D.1, Maltsev P.2, Polevich S.3
-
隶属关系:
- National Research Nuclear University “MEPhI”
- Institute of Ultra-High-Frequency Semiconductor Electronics
- ENPO Specialized Electron Systems
- 期: 卷 50, 编号 2 (2016)
- 页面: 222-227
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/196789
- DOI: https://doi.org/10.1134/S1063782616020093
- ID: 196789
如何引用文章
详细
The possibility of the simulation of transient radiation effects using laser radiation in microwave heterostructure elements based on AIIIBV semiconductor compounds is studied. The results of the laser simulation of transient radiation effects in pseudomorphous high-electron mobility transistors (pHEMTs) based on AlGaAs/InGaAs/GaAs heterostructures are reported. It is shown that, for the adequate simulation of transient effects in devices on GaAs substrates, one should use laser radiation with a wavelength of λ = 880–900 nm taking into account the dominant mechanisms of ionization in the transistor regions.
作者简介
D. Gromov
National Research Nuclear University “MEPhI”
编辑信件的主要联系方式.
Email: DVGromov@mephi.ru
俄罗斯联邦, Moscow, 115409
P. Maltsev
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: DVGromov@mephi.ru
俄罗斯联邦, Moscow, 117105
S. Polevich
ENPO Specialized Electron Systems
Email: DVGromov@mephi.ru
俄罗斯联邦, Moscow, 115409