Отправить статью по E-mail Assessment of the resistance to diffusion destruction of AlAs/GaAs nanoscale resonant-tunneling heterostructures by IR spectral ellipsometry
- Авторы: Makeev M.1, Ivanov Y.1, Meshkov S.1
-
Учреждения:
- Bauman State Technical University
- Выпуск: Том 50, № 1 (2016)
- Страницы: 83-88
- Раздел: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/196687
- DOI: https://doi.org/10.1134/S1063782616010140
- ID: 196687
Цитировать
Открытый доступ
Доступ предоставлен
Только для подписчиков
Аннотация
A technique for assessing the quality of AlAs/GaAs nanoscale resonant-tunneling heterostructures from the viewpoint of their resistance to diffusion destruction is developed. The diffusive spreading of AlAs/GaAs heterostructure layers is revealed by infrared (IR) spectral ellipsometry and the Al and Si diffusion coefficients in GaAs are determined.
Об авторах
M. Makeev
Bauman State Technical University
Автор, ответственный за переписку.
Email: mc.stiv@gmail.com
Россия, Vtoraya Baumanskaya ul. 5, Moscow, 105005
Y. Ivanov
Bauman State Technical University
Email: mc.stiv@gmail.com
Россия, Vtoraya Baumanskaya ul. 5, Moscow, 105005
S. Meshkov
Bauman State Technical University
Email: mc.stiv@gmail.com
Россия, Vtoraya Baumanskaya ul. 5, Moscow, 105005
