Enviar artigo por via de e-mail Assessment of the resistance to diffusion destruction of AlAs/GaAs nanoscale resonant-tunneling heterostructures by IR spectral ellipsometry
- Autores: Makeev M.1, Ivanov Y.1, Meshkov S.1
-
Afiliações:
- Bauman State Technical University
- Edição: Volume 50, Nº 1 (2016)
- Páginas: 83-88
- Seção: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/196687
- DOI: https://doi.org/10.1134/S1063782616010140
- ID: 196687
Citar
Acesso aberto
Acesso está concedido
Somente assinantes
Resumo
A technique for assessing the quality of AlAs/GaAs nanoscale resonant-tunneling heterostructures from the viewpoint of their resistance to diffusion destruction is developed. The diffusive spreading of AlAs/GaAs heterostructure layers is revealed by infrared (IR) spectral ellipsometry and the Al and Si diffusion coefficients in GaAs are determined.
Sobre autores
M. Makeev
Bauman State Technical University
Autor responsável pela correspondência
Email: mc.stiv@gmail.com
Rússia, Vtoraya Baumanskaya ul. 5, Moscow, 105005
Y. Ivanov
Bauman State Technical University
Email: mc.stiv@gmail.com
Rússia, Vtoraya Baumanskaya ul. 5, Moscow, 105005
S. Meshkov
Bauman State Technical University
Email: mc.stiv@gmail.com
Rússia, Vtoraya Baumanskaya ul. 5, Moscow, 105005
