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Modeling of silicon irradiation with C60 ions and the role of the interaction potential
Karasev K.P., Strizhkin D.A., Titov A.I., Karaseov P.A.
Changes in the optical properties of coatings based on hollow ZnO/SiO2 particles under electron irradiation
Dudin A.N., Yurina V.Y., Neshchimenko V.V., Mikhailov M.M., Yuriev S.A., Lapin A.N.
On the growth of InGaN nanowires by molecular-beam epitaxy: influence of the III/V flux ratio on the structural and optical properties
Gridchin V.O., Komarov S.D., Soshnikov I.P., Shtrom I.V., Reznik R.R., Kryzhanovskaya N.V., Cirlin G.E.
Composition of silicon jointly doped with impurity atoms of gallium and phosphorus
Zikrillaev N.F., Koveshnikov S.V., Turekeev X.S., Ismailov B.K.
Influence of the Substrate on the Photoluminescence Spectra of CaF2/Si Multilayer Structures
Velichko A.A., Ilyushin V.A., Krupin A.Y., Filimonova N.I., Rudenko I.E.
Molecular Dynamic Simulation of Silicon Irradiation with 2–8 keV Buckminsterfullerene C60 Ions
Karasev K.P., Strizhkin D.A., Titov A.I., Karaseov P.A.
Formation of Zn-Containing Clusters in Implanted Si3N4 Film
Tereshchenko A.N., Privezentsev V.V., Firsov A.A., Kulikauskas V.S., Zatekin V.V., Voronova M.I.
Microstrip Silicon Detector for Study of Ultra-Fast Processes at the Synchrotron Radiation Beam
Aulchenko V.M., Glushak A.A., Zhulanov V.V., Zhuravlev A.N., Kiselev V.A., Kudryavtsev .N., Piminov P.A., Titov V.M., Shekhtman L.I.
Simulation of Optical Parameters of Scintillation Position-Sensitive Detectors with Organic Light Guide
Trunov D.N., Marin V.N., Sadykov R.A., Altynbaev E.V., Glushkova T.I.
1 - 9 of 9 Items

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