Molecular Dynamic Simulation of Silicon Irradiation with 2–8 keV Buckminsterfullerene C 60  Ions

K. P. Karasev; Карасев К. П.; D. A. Strizhkin; Стрижкин Д. А.; A. I. Titov; Титов А. И.; P. A. Karaseov; Карасев П. А.

doi:10.31857/S1028096023010107

Molecular Dynamic Simulation of Silicon Irradiation with 2–8 keV Buckminsterfullerene C₆₀ Ions

Authors: Karasev K.P.¹, Strizhkin D.A.², Titov A.I.², Karaseov P.A.²
Affiliations:
1. Academic university named after Alferov
2. Polytechnic university named after Peter the Great
Issue: No 1 (2023)
Pages: 74-79
Section: Articles
URL: https://journals.rcsi.science/1028-0960/article/view/137662
DOI: https://doi.org/10.31857/S1028096023010107
EDN: https://elibrary.ru/BLCQCB
ID: 137662

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Abstract
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Abstract

The processes taking place on the (100)Si surface irradiated by 2–8 keV buckminsterfullerene C₆₀ ions at temperatures ranging from 0 to 700 K are examined using molecular dynamics computer simulations. Tersoff-ZBL and Airebo potentials are used to describe pairwise interactions, inelastic energy loss is taken into account for fast atoms. The results show that crystal temperature has no influence on the collision cascade development, but affect its thermalisation and crater formation on the surface. With the C₆₀ ion energy increase, carbon atoms penetrate deeper into the target, both crater volume and size of the rim around it enlarges. Temperature increase to 700 K leads to more effective crater and rim formation comparing to 0 and 300 K cases. We propose possible explanation of the revealed phenomenon.

Keywords

Buckminsterfullerene, MD simulations, ion bombardment, radiation damage, surface effects, silicon, temperature.

References

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