| Issue |
Section |
Title |
File |
| Vol 61, No 3 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures |
|
| Vol 61, No 3 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
Temperature dependence of diffusion length in MCT epitaxial layers |
|
| Vol 61, No 3 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
320 × 256 avalanche array photodetector on the basis of ternary alloys of the A3B5 group with an InGaAs absorbing layer and an InAlAs barrier layer |
|
| Vol 61, No 10 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
Experimental investigation and calculation of the spectral dependence of the absorption coefficient of single-layer epitaxial HgCdTe structures |
|
| Vol 62, No 3 (2017) |
Articles from the Russian Journal Prikladnaya Fizika |
Investigation of spectral dependences of the absorption coefficient in InGaAs layers |
|
| Vol 62, No 9 (2017) |
Articles from the Russian Journal Uspekhi Prikladnoi Fiziki |
Savitzky–Golay filtering of the spectral sensitivity of photodetector arrays |
|
| Vol 62, No 9 (2017) |
Articles from the Russian Journal Uspekhi Prikladnoi Fiziki |
Analysis of characteristics of photodetectors based on InGaAs heteroepitaxial structures for 3D imaging |
|
| Vol 63, No 3 (2018) |
Articles from the Russian Journal Prikladnaya Fizika |
Influence of Indirect Transitions on Optical Characteristics of A3B5 Heteroepitaxial Layers |
|
| Vol 63, No 9 (2018) |
Articles from the Russian Journal Prikladnaya Fizika |
Multi-Row Photodetectors for the Short Wavelength IR Region Based on HgCdTe Heteroepitaxial Structures |
|
| Vol 64, No 3 (2019) |
Article |
Effect of Surface Recombination on the Parameters of Photodiodes Based on HgCdTe Semiconductor Structures |
|
| Vol 64, No 9 (2019) |
Article |
Analysis of Current–Voltage Characteristics in UV AlGaN Heterostructure FPAs |
|
