Шығарылым |
Бөлім |
Атауы |
Файл |
Том 61, № 3 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures |
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Том 61, № 3 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
Temperature dependence of diffusion length in MCT epitaxial layers |
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Том 61, № 3 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
320 × 256 avalanche array photodetector on the basis of ternary alloys of the A3B5 group with an InGaAs absorbing layer and an InAlAs barrier layer |
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Том 61, № 10 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
Experimental investigation and calculation of the spectral dependence of the absorption coefficient of single-layer epitaxial HgCdTe structures |
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Том 62, № 3 (2017) |
Articles from the Russian Journal Prikladnaya Fizika |
Investigation of spectral dependences of the absorption coefficient in InGaAs layers |
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Том 62, № 9 (2017) |
Articles from the Russian Journal Uspekhi Prikladnoi Fiziki |
Savitzky–Golay filtering of the spectral sensitivity of photodetector arrays |
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Том 62, № 9 (2017) |
Articles from the Russian Journal Uspekhi Prikladnoi Fiziki |
Analysis of characteristics of photodetectors based on InGaAs heteroepitaxial structures for 3D imaging |
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Том 63, № 3 (2018) |
Articles from the Russian Journal Prikladnaya Fizika |
Influence of Indirect Transitions on Optical Characteristics of A3B5 Heteroepitaxial Layers |
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Том 63, № 9 (2018) |
Articles from the Russian Journal Prikladnaya Fizika |
Multi-Row Photodetectors for the Short Wavelength IR Region Based on HgCdTe Heteroepitaxial Structures |
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Том 64, № 3 (2019) |
Article |
Effect of Surface Recombination on the Parameters of Photodiodes Based on HgCdTe Semiconductor Structures |
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Том 64, № 9 (2019) |
Article |
Analysis of Current–Voltage Characteristics in UV AlGaN Heterostructure FPAs |
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