Email this article Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures
- Authors: Iakovleva N.I.1, Boltar K.O.1,2, Sednev M.V.1, Patrashin A.I.1, Irodov N.A.1
-
Affiliations:
- OAO NPO Orion
- Moscow Institute of Physics and Technology (State University)
- Issue: Vol 61, No 3 (2016)
- Pages: 319-323
- Section: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/196835
- DOI: https://doi.org/10.1134/S1064226916030207
- ID: 196835
Cite item
Open Access
Access granted
Subscription Access
Abstract
SWIR ADP 320 × 256 FPAs based on p–i–n photodiodes in InGaAs heterostructures have been developed and investigated. The typical InGaAs/InP PIN heterostructures are formed by Metal Organic Vapor Phase Epitaxy (MOVPE) on n+ type InP substrates. The InGaAs/InP PIN photodiodes performance have been estimated by measuring current-voltage characteristics. APD arrays are designed using a mesa-passivated avalanche photodiode device array of p–i–n junctions in heterostructure with common absorption and multiplication regions. The optimal operating point for managing avalanche application depended on various factors has been started at 15 V bias and the multiplication coefficient was of 2–4.
About the authors
N. I. Iakovleva
OAO NPO Orion
Author for correspondence.
Email: orion@orion-ir.ru
Russian Federation, Kosinskaya ul. 9, Moscow, 111538
K. O. Boltar
OAO NPO Orion; Moscow Institute of Physics and Technology (State University)
Email: orion@orion-ir.ru
Russian Federation, Kosinskaya ul. 9, Moscow, 111538; Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141700
M. V. Sednev
OAO NPO Orion
Email: orion@orion-ir.ru
Russian Federation, Kosinskaya ul. 9, Moscow, 111538
A. I. Patrashin
OAO NPO Orion
Email: orion@orion-ir.ru
Russian Federation, Kosinskaya ul. 9, Moscow, 111538
N. A. Irodov
OAO NPO Orion
Email: orion@orion-ir.ru
Russian Federation, Kosinskaya ul. 9, Moscow, 111538
