| 期 |
栏目 |
标题 |
文件 |
| 卷 61, 编号 3 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures |
|
| 卷 61, 编号 3 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
Focal plane arrays mesastructures formation by ion-beam etching |
|
| 卷 61, 编号 3 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
Temperature dependence of diffusion length in MCT epitaxial layers |
|
| 卷 61, 编号 3 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
320 × 256 avalanche array photodetector on the basis of ternary alloys of the A3B5 group with an InGaAs absorbing layer and an InAlAs barrier layer |
|
| 卷 61, 编号 3 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
Characteristics of heteroepitaxial structures AlxGa1–xN for p–i–n diode focal plane arrays |
|
| 卷 61, 编号 10 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
Solid-state photoelectronics of the ultraviolet range (Review) |
|
| 卷 61, 编号 10 (2016) |
Articles from the Russian Journal Prikladnaya Fizika |
Investigation of planar photodiodes of a focal plane array based on a heteroepitaxial InGaAs/InP structure |
|
| 卷 62, 编号 3 (2017) |
Articles from the Russian Journal Prikladnaya Fizika |
Methods for measuring the current–voltage characteristics of photodiodes in a multirow infrared photodetector |
|
| 卷 62, 编号 3 (2017) |
Articles from the Russian Journal Prikladnaya Fizika |
Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate |
|
| 卷 62, 编号 9 (2017) |
Articles from the Russian Journal Uspekhi Prikladnoi Fiziki |
Analysis of characteristics of photodetectors based on InGaAs heteroepitaxial structures for 3D imaging |
|
| 卷 63, 编号 3 (2018) |
Articles from the Russian Journal Prikladnaya Fizika |
Long-Wave Infrared Focal Plane Arrays Based on a Quantum-Well AlGaAs/GaAs Structure with 384 × 288 Elements |
|
| 卷 63, 编号 9 (2018) |
Articles from the Russian Journal Prikladnaya Fizika |
Current–Voltage Characteristics of n-B-p Structures with Absorbing In0.53Ga0.47As Layer |
|
| 卷 63, 编号 9 (2018) |
Articles from the Russian Journal Prikladnaya Fizika |
Multi-Row Photodetectors for the Short Wavelength IR Region Based on HgCdTe Heteroepitaxial Structures |
|
| 卷 64, 编号 3 (2019) |
Article |
Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm |
|
| 卷 64, 编号 3 (2019) |
Article |
Short-Wave Infrared Camera with a Focal Plane Array Based on InGaAs/InP Heterostructures |
|
| 卷 64, 编号 9 (2019) |
Article |
Focal Plane Array Based on the InGaAs/InP Heterostructure for 3D Imaging in Short-Wave IR Range |
|
| 卷 64, 编号 9 (2019) |
Article |
Analysis of Current–Voltage Characteristics in UV AlGaN Heterostructure FPAs |
|
