Email this article Focal plane arrays mesastructures formation by ion-beam etching
- Authors: Sednev M.V.1, Boltar K.O.1,2, Sharonov Y.P.1, Lopukhin A.A.1
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Affiliations:
- OAO NPO Orion
- Moscow Institute of Physics and Technology (State University)
- Issue: Vol 61, No 3 (2016)
- Pages: 324-327
- Section: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/196838
- DOI: https://doi.org/10.1134/S1064226916030153
- ID: 196838
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Abstract
The results of investigation of profiles formed by ion-beam etching of semiconductor structures through a photolithographic mask are presented. The minimum dimensions of unmasked regions on the surfaces of two studied structures are 2 and 5 μm, respectively. It is demonstrated that the etching rate reduces with reduction in the width of the unmasked gap. The effect of reflection of the ion beam from vertical walls formed during etching may be used for fabrication of submicron separating mesaregions.
About the authors
M. V. Sednev
OAO NPO Orion
Author for correspondence.
Email: orion@orion-ir.ru
Russian Federation, ul. Kosinskaya 9, Moscow, 111538
K. O. Boltar
OAO NPO Orion; Moscow Institute of Physics and Technology (State University)
Email: orion@orion-ir.ru
Russian Federation, ul. Kosinskaya 9, Moscow, 111538; Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141700
Yu. P. Sharonov
OAO NPO Orion
Email: orion@orion-ir.ru
Russian Federation, ul. Kosinskaya 9, Moscow, 111538
A. A. Lopukhin
OAO NPO Orion
Email: orion@orion-ir.ru
Russian Federation, ul. Kosinskaya 9, Moscow, 111538
