Solid-state photoelectronics of the ultraviolet range (Review)


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Abstract

The state-of-the-art of the development of photodetectors and photoreceiving devices operating in the range of electromagnetic radiation 0.1–0.38 μm is presented. A review of the world achievements and tendencies in the development of this field of photoelectronics based on various semiconducting materials is presented. Main physical and engineering problems of the development of ultraviolet photodetector modules designed on the basis of the АIII-N compounds are considered.

About the authors

K. O. Boltar

Orion Research and Production Association; Moscow Institute of Physics and Technology (State University)

Author for correspondence.
Email: orion@orion-ir.ru
Russian Federation, ul. Kosinskaya 9, Moscow, 111538; Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141700

I. D. Burlakov

Orion Research and Production Association; Moscow Institute of Radio Engineering and Automation

Email: orion@orion-ir.ru
Russian Federation, ul. Kosinskaya 9, Moscow, 111538; pr. Vernadskogo 78, Moscow, 119454

V. P. Ponomarenko

Orion Research and Production Association; Moscow Institute of Physics and Technology (State University)

Email: orion@orion-ir.ru
Russian Federation, ul. Kosinskaya 9, Moscow, 111538; Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141700

A. M. Filachev

Orion Research and Production Association

Email: orion@orion-ir.ru
Russian Federation, ul. Kosinskaya 9, Moscow, 111538

V. V. Salo

Orion Research and Production Association

Email: orion@orion-ir.ru
Russian Federation, ul. Kosinskaya 9, Moscow, 111538


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